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	A semiconductor laser structure
	YEE LOY LAM
	2003-08-20
著作权人	DENSELIGHT SEMICONDUCTORS PTE LTD
专利号	GB2385462A
国家	英国
文献子类	发明申请
其他题名	A semiconductor laser structure
英文摘要	A semiconductor waveguide having a rib structure for use in a laser diode device, comprising a metal contact layer deposited over the rib structure and dielectric layer interposed between the side walls of the rib structure and the metal contact layer. The layered rib structure enhances electrical confinement in the device, while the dielectric layer serves both as a passivation layer to protect the exposed rib sidewall and as a thermal dissipation means conducting heat away from the active lasing region to the metal contact layer. In a second embodiment, a thin intrinsic InP layer is regrown on the sidewalls and base of the rib (fig. 6), which allows reduction of surface recombination leakage current.
公开日期	2003-08-20
申请日期	2002-02-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67580]
专题	半导体激光器专利数据库
作者单位	DENSELIGHT SEMICONDUCTORS PTE LTD
推荐引用方式 GB/T 7714	YEE LOY LAM. A semiconductor laser structure. GB2385462A. 2003-08-20.

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