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	Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
	MUGHAL, ASAD J.; KOWSZ, STACY J.; FARRELL, ROBERT M.; YONKEE, BENJAMIN P.; YOUNG, ERIN C.; PYNN, CHRISTOPHER D.; MARGALITH, TAL; SPECK, JAMES S.; NAKAMURA, SHUJI; DENBAARS, STEVEN P.
	2017-08-10
著作权人	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
专利号	WO2017136832A1
国家	世界知识产权组织
文献子类	发明申请
其他题名	Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
英文摘要	A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
公开日期	2017-08-10
申请日期	2017-02-06
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67366]
专题	半导体激光器专利数据库
作者单位	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
推荐引用方式 GB/T 7714	MUGHAL, ASAD J.,KOWSZ, STACY J.,FARRELL, ROBERT M.,et al. Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers. WO2017136832A1. 2017-08-10.

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