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	Formation of resist pattern
	ODAKA ISAMU; WAKITA KOICHI; MIKAMI OSAMU
	1989-09-07
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1989224767A
国家	日本
文献子类	发明申请
其他题名	Formation of resist pattern
英文摘要	PURPOSE:To easily shift the phase of a diffraction grating by lambda/4 by forming a phase shift pattern on a single-layer resist film which is coated on a wafer and permits image reversal. CONSTITUTION:A positive type resist 2 which allows image reversal is coated on the substrate 1 and is prebaked. The part irradiated with light forms an alkali-soluble layer 2' when a light shielding plate 3 is disposed on the resist film which is not to be exposed in order to form a phase shift region and when the resist is subjected to two beam interference exposing 4 which is capable of making simultaneous exposing in a wide area. Heat is then applied to the resist to convert the alkali-soluble layer 2' to the alkali-insoluble layer 2''. The unexposed part which is not exposed by the light is then converted to the alkali-soluble layer 2' by irradiation of UV rays 5 thereto. The part where the light shielding plate 3 exists thus far is exposed and the part irradiated with the light is converted to the alkali-soluble layer 2' when the light shielding plate 3 is removed and the resist is again subjected to the pattern formation by the two beam interference exposing 4. The pattern shifted by the lambda/4 phase with the edge part of the light shielding plate 3 as a boundary is formed by one time of the developing stage when the resist layer is subjected to development.
公开日期	1989-09-07
申请日期	1988-03-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67309]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	ODAKA ISAMU,WAKITA KOICHI,MIKAMI OSAMU. Formation of resist pattern. JP1989224767A. 1989-09-07.

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