| Method for etching iii-v semiconductor material | |
| FRANZ, GERHARD | |
| 1998-12-03 | |
| 著作权人 | SIEMENS AKTIENGESELLSCHAFT |
| 专利号 | WO1998054757A1 |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for etching iii-v semiconductor material |
| 英文摘要 | The aim of the invention is to increase the etch rate for dry-etching III-V semiconductor materials. To this end, BCl3 gas and Cl2 gas are excited together in a plasma and the mixture of these excited gases is brought into contact with the semiconductor material. The inventive method provides a quicker means of producing LED's on a GaN base and AlAs, GaAs and GaP LED's, VCSEL's and edge emission lasers. |
| 公开日期 | 1998-12-03 |
| 申请日期 | 1998-05-26 |
| 状态 | 未确认 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/66889]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SIEMENS AKTIENGESELLSCHAFT |
| 推荐引用方式 GB/T 7714 | FRANZ, GERHARD. Method for etching iii-v semiconductor material. WO1998054757A1. 1998-12-03. |
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