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	Manufacture of phase-shifting diffraction grating
	KOBAYASHI AKIRO
	1990-01-24
著作权人	NEC CORP
专利号	JP1990021681A
国家	日本
文献子类	发明申请
其他题名	Manufacture of phase-shifting diffraction grating
英文摘要	PURPOSE:To prevent an abnormal growth at the time of an epitaxial growth and to contrive the stabilization of characteristics by a method wherein the whole surface of a phase shift region is exposed to light. CONSTITUTION:An N-type photoresist layer 2 is applied on an InP semiconductor substrate 1 and after a heat treatment is performed, an intermediate layer 3 and a phase shift layer 4 are applied and a heat treatment is performed. Then, an exposure is performed, the layer 4 is developed and part of the layer 4 is removed to form the layer 4 by patterning. After that, the substrate 1 is slanted at a certain angle and is exposed to light with two laser beams 5a and 5b intersecting each other by a two-flux interference exposure. After this, a phase shift part is selectively exposed to light with an He-Cd laser beam 6 using a photomask 14. After that, by removing the layer 3, the layer 4 is also removed simultaneously, and thereafter, the layer 2 is developed to pattern. After that, the substrate is etched using the patterned photoresist layer as mask. In this etching, the phase shift part remains flat because the resist layer is left on the whole surface. After that, by removing the photoresist layer, a diffraction grating is formed.
公开日期	1990-01-24
申请日期	1988-07-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66129]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KOBAYASHI AKIRO. Manufacture of phase-shifting diffraction grating. JP1990021681A. 1990-01-24.

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