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	Detecting method for pn junction in compound semiconductor
	UEDA OSAMU; TANAHASHI TOSHIYUKI; USHIJIMA ICHIROU
	1983-04-04
著作权人	FUJITSU LTD
专利号	JP1983056350A
国家	日本
文献子类	发明申请
其他题名	Detecting method for pn junction in compound semiconductor
英文摘要	PURPOSE:To detect the interface of a homo-junction distinctly by coating a part of the semiconductor with Au or the alloy of Au and another with at least one metal. CONSTITUTION:A part of the semiconductor is coated with Au or the alloy of Au and another at least with one metal. The interface of the homo-junction can be detected distinctly by chemically corroding the end surface of the semiconductor by using an alkaline aqueous solution containing alkali ferricyanide. Accordingly, the method remarkably contributes to the detection of the shape of the interface of every kind of junctions, such as a multilayer epitaxial wafer including the homo-junction, a diffused junction, etc.
公开日期	1983-04-04
申请日期	1981-09-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/66009]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	UEDA OSAMU,TANAHASHI TOSHIYUKI,USHIJIMA ICHIROU. Detecting method for pn junction in compound semiconductor. JP1983056350A. 1983-04-04.

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