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	Double hetero-junction structure and semiconductor laser element
	SHIBATA HAJIME; MIHASHI YOSHINOBU; KONDO HIDEKAZU; OOTA TOMOHIRO
	1992-11-20
著作权人	AGENCY OF IND SCIENCE & TECHNOL
专利号	JP1992333291A
国家	日本
文献子类	发明申请
其他题名	Double hetero-junction structure and semiconductor laser element
英文摘要	PURPOSE:To enable optical recording media to be mounted high in density by a method wherein a diamond single crystal is made to serve as an active layer, and a clad layer is formed of cubic boron nitride(cBN) single crystal. CONSTITUTION:A P-type cBN layer 1, a diamond layer 2, and an N-type cBN layer 3 are successively laminated on a substrate 4, and a double hetero-junction is formed by the junction of the layers 1, 2, and 3. The diamond layer 2 is functions as a light emitting region or an active layer. The cBN layers 1 and 3 are made to serve as clad layer. As the band gap of cBN is larger than that of diamond, a potential barrier induced at a junction interface between them prevents thermal diffusion from the active layer 3 to the cBN clad layers 1 and 3. Light emitted inside the diamond active layer 2 is totally reflected by the junction interface of the layer 2 with the clad layers 1 and 3, so that the diamond layer 2 is small in emission loss. By this setup, optical recording media can be mounted high in density.
公开日期	1992-11-20
申请日期	1991-05-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65924]
专题	半导体激光器专利数据库
作者单位	AGENCY OF IND SCIENCE & TECHNOL
推荐引用方式 GB/T 7714	SHIBATA HAJIME,MIHASHI YOSHINOBU,KONDO HIDEKAZU,et al. Double hetero-junction structure and semiconductor laser element. JP1992333291A. 1992-11-20.

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