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	Photonic crystal surface emitting laser and method of manufacturing the same
	NUMATA, AIHIKO
	2012-12-27
著作权人	CANON KABUSHIKI KAISHA
专利号	US20120327966A1
国家	美国
文献子类	发明申请
其他题名	Photonic crystal surface emitting laser and method of manufacturing the same
英文摘要	A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.
公开日期	2012-12-27
申请日期	2012-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65890]
专题	半导体激光器专利数据库
作者单位	CANON KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NUMATA, AIHIKO. Photonic crystal surface emitting laser and method of manufacturing the same. US20120327966A1. 2012-12-27.

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