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	Manufacture of surface-emitting type semiconductor laser device
	ISHIKAWA TORU; IBARAKI AKIRA; FURUSAWA KOTARO
	1991-12-13
著作权人	科学技術振興事業団
专利号	JP1991283481A
国家	日本
文献子类	发明申请
其他题名	Manufacture of surface-emitting type semiconductor laser device
英文摘要	PURPOSE:To prevent pit flaws from being induced in a current block layer and a reactive current path from being formed so as to enable a semiconductor laser device to be lessened in threshold current and improved in uniformity by a method wherein a block layer of the same conductivity type is newly provided surrounding an active region. CONSTITUTION:An active region 5 is provided at the center of a substrate, and a first block layer 9 and a second block layer 10 different from each other in conductivity type are provided surrounding the active region 5. A pair of reflecting mirrors 3 and 13 is provided onto the substrate sandwiching the active region 5 and the block layers 9 and 10 between them to constitute a surface- emitting type semiconductor laser device. At this point, after the second block layer 10 is formed, a third block layer 11 of the same conductivity type with the second block layer is provided surrounding the active region 5. By this setup, pit flaws and thin-wall parts induced in the second block layer 10 are recovered by the third block layer 1 Therefore, a current block effect can be prevented from deteriorating due to a P-N reverse bias.
公开日期	1991-12-13
申请日期	1990-03-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65850]
专题	半导体激光器专利数据库
作者单位	科学技術振興事業団
推荐引用方式 GB/T 7714	ISHIKAWA TORU,IBARAKI AKIRA,FURUSAWA KOTARO. Manufacture of surface-emitting type semiconductor laser device. JP1991283481A. 1991-12-13.

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