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	Semiconductor laser and optical-electronic device
	MOMOSE, MASAYUKI
	2003-05-08
著作权人	HITACHI, LTD.
专利号	US20030086459A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser and optical-electronic device
英文摘要	A semiconductor laser element of a 630-nm band wavelength is designed to have an aspect ratio of beam far field pattern of 6 or less. The laser element comprises an n-type GaAs substrate having a slope band in part of its main surface, and an n-type cladding layer, an active layer having a quantum well structure of two periods, p-type cladding layers (interposed by a current blocking layer) and a p-type contact layer, which are formed sequentially by being laminated on the substrate main surface, and a p-side and n-side electrodes formed on the contact layer and the substrate rear surface, respectively. The active layer emits a laser beam of a wavelength of 630-nm band from its section of 1-mum width on both end faces of the slope. The well layers of active layer have a tensile strain and the light emission section of active layer is adjoined on both sides thereof by a low-refractivity layer, thereby structuring an effective refractivity waveguide.
公开日期	2003-05-08
申请日期	2002-10-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65808]
专题	半导体激光器专利数据库
作者单位	HITACHI, LTD.
推荐引用方式 GB/T 7714	MOMOSE, MASAYUKI. Semiconductor laser and optical-electronic device. US20030086459A1. 2003-05-08.

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