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	DBR using the combination of II-VI and III-V materials for the application to 3-55 mum
	KWON, HOKI
	2005-11-03
著作权人	FINISAR CORPORATION
专利号	US20050243887A1
国家	美国
文献子类	发明申请
其他题名	DBR using the combination of II-VI and III-V materials for the application to 3-55 mum
英文摘要	A VCSEL includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; and a second mirror stack over the active region, wherein either or both of the first and second mirror stacks include alternating layers of II-VI and III-V compounds, and wherein said II-VI compound is selected from the group consisting of ZnCdSe, ZnSeTe and ZnMgSe, and said III-V compound is selected from the group consisting of InGaAsP, InAlGaAs and InP. Such a mirror stack is especially useful for a long-wavelength VCSEL.
公开日期	2005-11-03
申请日期	2004-04-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/65664]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	KWON, HOKI. DBR using the combination of II-VI and III-V materials for the application to 3-55 mum. US20050243887A1. 2005-11-03.

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