DBR using the combination of II-VI and III-V materials for the application to 3-55 mum
KWON, HOKI
2005-11-03
著作权人FINISAR CORPORATION
专利号US20050243887A1
国家美国
文献子类发明申请
其他题名DBR using the combination of II-VI and III-V materials for the application to 3-55 mum
英文摘要A VCSEL includes a substrate; a first mirror stack over the substrate; an active region having a plurality of quantum wells over the first mirror stack; and a second mirror stack over the active region, wherein either or both of the first and second mirror stacks include alternating layers of II-VI and III-V compounds, and wherein said II-VI compound is selected from the group consisting of ZnCdSe, ZnSeTe and ZnMgSe, and said III-V compound is selected from the group consisting of InGaAsP, InAlGaAs and InP. Such a mirror stack is especially useful for a long-wavelength VCSEL.
公开日期2005-11-03
申请日期2004-04-30
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/65664]  
专题半导体激光器专利数据库
作者单位FINISAR CORPORATION
推荐引用方式
GB/T 7714
KWON, HOKI. DBR using the combination of II-VI and III-V materials for the application to 3-55 mum. US20050243887A1. 2005-11-03.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace