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	Surface light-emitting semiconductor mode lock laser
	IWAMURA HIDETOSHI; UENOHARA HIROYUKI
	1992-09-03
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1992247676A
国家	日本
文献子类	发明申请
其他题名	Surface light-emitting semiconductor mode lock laser
英文摘要	PURPOSE:To enable a quantum-confinement Stark effect to be utilized, degree of freedom within a range where a mode lock occurs to be increased, and controllability to be increased by introducing a superlattice structure at a gain region and a saturable absorption region and then forming a vertical resonator structure for forming a resonator in vertical direction for a growth surface of a crystal. CONSTITUTION:An n-InP buffer layer 2, a saturable absorption region 3 in an n-InGaAs/InP superlattice structure, an n-InP clad layer 4, a gain region 5 in InGaAs/InP superlattice structure (An excitation element absorption peak wavelength of the gain region 5 is set to be equal to an excitation element absorption peak wavelength of the saturable absorption region 3 or longer than it) are allowed to grow in sequence on an InP substrate A peak value of a gain spectrum of the gain region 5 is moved to a desired wavelength and an electric field is adjusted so that a saturable characteristic of the excitation element absorption becomes the maximum. Since light intensity where absorption saturation occurs is small, operation at a low power can be achieved.
公开日期	1992-09-03
申请日期	1991-02-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64795]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	IWAMURA HIDETOSHI,UENOHARA HIROYUKI. Surface light-emitting semiconductor mode lock laser. JP1992247676A. 1992-09-03.

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