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	Semiconductor Laser with gamma and X electron barriers
	STEPHEN PETER NAJDA
	2000-06-21
著作权人	SHARP KABUSHIKI KAISHA
专利号	GB2344932A
国家	英国
文献子类	发明申请
其他题名	Semiconductor Laser with gamma and X electron barriers
英文摘要	A separate confinement hetero structure laser device has an optical guiding region 10 and a p-doped cladding layer 11 . An electron-reflecting barrier 14 is disposed at the p-side of the device, for example at the interface between the optical guiding region 10 and the cladding region 1 The electron-reflecting barrier 14 has a first electron-reflecting layer 12 for reflecting Q -electrons and a second electron-reflecting layer 13 for reflecting X-electrons. The electron-reflecting layers can be strained semiconductor layers. A strain balanced electron-reflecting barrier is formed if one of the electron-reflecting layers 12 is in tensile strain and the other electron-reflecting layer 13 is in compressive strain. In another feature of the invention, only a single electron-reflecting layer 12 is provided. A reduction in the leakage of X-electrons is obtained by making the X-band of the electron-reflecting layer 12 degenerate with the Q -band of the optical guiding region 10. The laser may be fabricated in the AlGaInP material system, where the barrier for Q electrons comprises AlP or GaP and the barrier for X electrons comprises InP.
公开日期	2000-06-21
申请日期	1998-12-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64642]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	STEPHEN PETER NAJDA. Semiconductor Laser with gamma and X electron barriers. GB2344932A. 2000-06-21.

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