| Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi | |
| SAARINEN, MIKA; PESSA, MARKUS; DUMITRESCU, MIHAIL; XIANG, NING | |
| 2002-10-28 | |
| 著作权人 | OPTOELECTRONICS RESEARCH CENTRE |
| 专利号 | FI20010878A |
| 国家 | 芬兰 |
| 文献子类 | 发明申请 |
| 其他题名 | Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi |
| 英文摘要 | The invention relates to a surface-emitting semiconductor light source (1), grown on a semiconductor substrate (2). The semiconductor light source (1) comprises at least one active region (17) embedded in an optical cavity (23) placed between two mirrors, from which at least one is realized as a semiconductor DBR mirror (16, 20) with the period containing a low refraction index high-bandgap layer (6, 7), a high refraction index low-bandgap layer (3, 10) and at least one layer with intermediate bandgap (4, 5, 8, 9). All the layers with intermediate bandgap (4, 5, 8, 9) within one DBR period are formed only on one side of the high-bandgap layer, before said high-bandgap layer in the direction of transfer for the majority charge carriers. |
| 公开日期 | 2002-10-28 |
| 申请日期 | 2001-04-27 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64221]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OPTOELECTRONICS RESEARCH CENTRE |
| 推荐引用方式 GB/T 7714 | SAARINEN, MIKA,PESSA, MARKUS,DUMITRESCU, MIHAIL,et al. Suuren hyötysuhteen omaava puolijohdevalolähde ja menetelmä sen valmistamiseksi. FI20010878A. 2002-10-28. |
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