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	Low current semiconductor laser
	YAMADA MINORU
	1987-08-17
著作权人	YAMADA MINORU
专利号	JP1987188392A
国家	日本
文献子类	发明申请
其他题名	Low current semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser of low oscillation threshold current by a method wherein the device is made to perform laser action making electron density and hole density in an active region to be differed remarkably as they are. CONSTITUTION:Electron density on the conduction band side and hole density on the valence band side in an active region are increased holding both in condition being differed remarkably as they are, beam absorption to be generated according to electron transfer to the conduction band side from the valence band side is reduced, moreover at the same time, probability of spontaneous emission is reduced also, and an oscillation threshold current is made to be reduced. For example, an active region layer 1 is constructed of a P-type semiconductor having the smallest energy gap Eg1, and P-type semiconductor layers 9, 10 of two pieces having large energy gaps are put on both the sides thereof. Moreover on the outsides thereof, a P-type electromagnetic field trapping layer 7 and an N-type similar layer 8 having band gaps Eg7, Eg8 to vary in the form of a parabolic function are attached. Finally, a P-type layer 2 and an N-type layer 3 having the largest band gaps are attached to the outsides of the layers 7, 8 respectively.
公开日期	1987-08-17
申请日期	1986-02-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64210]
专题	半导体激光器专利数据库
作者单位	YAMADA MINORU
推荐引用方式 GB/T 7714	YAMADA MINORU. Low current semiconductor laser. JP1987188392A. 1987-08-17.

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