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	Atomic element doped semi-conductor injection laser fabricated by using ion implantation and epitaxial growth on the implanted surface
	WANG, SHIH-YUAN; TAN, MICHAEL R.T.
	1992-04-22
著作权人	HEWLETT-PACKARD COMPANY
专利号	EP0470372A3
国家	欧洲专利局
文献子类	发明申请
其他题名	Atomic element doped semi-conductor injection laser fabricated by using ion implantation and epitaxial growth on the implanted surface
英文摘要	A semiconductor laser diode includes a first buffer layer (14), a second buffer layer (18') and an active layer (16) sandwiched between the two buffer layers. The active layer contains dopant ions where the dopant ions are such that energy transfer between the unimplanted material in the active layer and the dopant ions implanted causes lasing action substantially at a single frequency characteristic of the dopant ions. The two buffer layers confine light emitted by the active layer. According to one aspect of the invention, the second buffer layer is grown epitaxially on the active layer. According to one aspect of the invention, the second buffer layer is grown epitaxially on the active layer. In the preferred embodiment, the structure is made by first growing a thin second buffer layer (18)_ epitaxially on the active layer. The dopant ions are then implanted into the active layer through the thin second buffer layer (18). The structure us heated to a high temperature to anneal the structure and to activate the dopants. The second buffer layer is then further grown to make it thicker so as to be more effective in confining the light emission in the active layer. According to another aspect of the invention, the dopant ions are titanium ions.
公开日期	1992-04-22
申请日期	1991-07-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/64153]
专题	半导体激光器专利数据库
作者单位	HEWLETT-PACKARD COMPANY
推荐引用方式 GB/T 7714	WANG, SHIH-YUAN,TAN, MICHAEL R.T.. Atomic element doped semi-conductor injection laser fabricated by using ion implantation and epitaxial growth on the implanted surface. EP0470372A3. 1992-04-22.

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