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	Variable wavelength semiconductor laser
	MURATA SHIGERU
	1991-04-10
著作权人	NEC CORP
专利号	JP1991084985A
国家	日本
文献子类	发明申请
其他题名	Variable wavelength semiconductor laser
英文摘要	PURPOSE:To realize change in the wavelength at high speed by doping a light guiding layer with P-type impurity of high concentration. CONSTITUTION:This semiconductor laser is composed of three regions, namely an active region 100, a phase control region 200 and a distribution Bragg reflection(DBR) region 300. The phase control region 200 and the DBR region 300 have the same layer structure. These two regions compose a wavelength control region 400, where a light guiding layer 30 exists, and carriers are injected in said layer 30 in order to control the wavelength. When electrons are injected in a P-type carrier injection layer through a P-N junction, the change in its refractive index is large. While, when N-type carriers are injected, the change in the refractive index is little because electrons have been existing from the beginning. Accordingly, it is necessary that the impurities injected in the carrier injection layer is P-type in order to realize a change in wavelength at high speed.
公开日期	1991-04-10
申请日期	1989-08-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63884]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	MURATA SHIGERU. Variable wavelength semiconductor laser. JP1991084985A. 1991-04-10.

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