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	Submount and optical semiconductor device
	TSUNEKANE MASAKI
	1990-05-25
著作权人	NEC CORP
专利号	JP1990137389A
国家	日本
文献子类	发明申请
其他题名	Submount and optical semiconductor device
英文摘要	PURPOSE:To prevent a brazing material from being swollen at a part directly under a light-emitting point and to prevent a radiated beam from the light- emitting point from being scattered by a method wherein a belt-shaped thin-film brazing material whose width is identical to or smaller than an element length of an optical semiconductor element to be melted and bonded is formed on a metallized layer. CONSTITUTION:Si is used as a material for a submount 2; metallized layers 7, 8 of Ti/Pt/Au are formed on the surface, the rear surface and one side face. A PbSn film as a brazing material 13 is formed on the whole rear surface of the metallized layer 9; a brazing material 12 composed of an Sn film is formed on the surface along the side where the metallized layer 7 has been formed. Thereby, since pushed-out Sn is not swollen and is spread to the outside along the metallized layer 7 of the submount directly under a light-emitting point 11b, it is possible to efficiently utilize a radiated beam without blocking the light-emitting point.
公开日期	1990-05-25
申请日期	1988-11-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63187]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	TSUNEKANE MASAKI. Submount and optical semiconductor device. JP1990137389A. 1990-05-25.

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