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	Test method for semiconductor laser
	NAKAI TAKAYUKI; OOUCHI YASUNORI
	1989-12-08
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1989305585A
国家	日本
文献子类	发明申请
其他题名	Test method for semiconductor laser
英文摘要	PURPOSE:To perform distinguishing work efficiently and increase the reliability, by measuring the operating current at specified temperature and performing good-product judgement with the change rate of the operating current at each measuring time as a judging criterion. CONSTITUTION:At first, the operating current is measured in a state of oscillation of predetermined light output power at room temperature Then, the temperature is changed in the same light outputting state, and the operating currents are measured at the measuring point 2 of the initial time of the high temperature period, at the measuring point 3 after having been kept at the high temperature for 10 hours, and at the measuring point 4 cooled from the high temperature. When the currents at the measuring points 1-4 are compared, the differences found by the comparison are dependent upon the manufacture history of a chip, and besides they are influenced by the assembly history, between the measuring points 2-3 and between the points 3-4. Thus, selection can be done in a short period of time by comparing the changes of the operating currents at the measuring points 1-4 during selecting work, so it is done more efficiently. Besides, if good-product judgement is done by detecting that the change rate of the operating current is within standards, it becomes possible to select products with high reliability.
公开日期	1989-12-08
申请日期	1988-06-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/63158]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	NAKAI TAKAYUKI,OOUCHI YASUNORI. Test method for semiconductor laser. JP1989305585A. 1989-12-08.

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