Laser ablation process for manufacturing submounts for laser diodes and laser diode units | |
OVTCHINNIKOV, ALEXANDER; BERISHEV, IGOR; KOMISSAROV, ALEXEY; TODOROV, SVLETAN; TRUBENKO, PAVEL | |
2016-12-01 | |
著作权人 | IPG PHOTONICS CORPORATION |
专利号 | US20160352070A1 |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Laser ablation process for manufacturing submounts for laser diodes and laser diode units |
英文摘要 | A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation. |
公开日期 | 2016-12-01 |
申请日期 | 2016-08-15 |
状态 | 申请中 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/62179] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | IPG PHOTONICS CORPORATION |
推荐引用方式 GB/T 7714 | OVTCHINNIKOV, ALEXANDER,BERISHEV, IGOR,KOMISSAROV, ALEXEY,et al. Laser ablation process for manufacturing submounts for laser diodes and laser diode units. US20160352070A1. 2016-12-01. |
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