Laser ablation process for manufacturing submounts for laser diodes and laser diode units
OVTCHINNIKOV, ALEXANDER; BERISHEV, IGOR; KOMISSAROV, ALEXEY; TODOROV, SVLETAN; TRUBENKO, PAVEL
2016-12-01
著作权人IPG PHOTONICS CORPORATION
专利号US20160352070A1
国家美国
文献子类发明申请
其他题名Laser ablation process for manufacturing submounts for laser diodes and laser diode units
英文摘要A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.
公开日期2016-12-01
申请日期2016-08-15
状态申请中
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/62179]  
专题半导体激光器专利数据库
作者单位IPG PHOTONICS CORPORATION
推荐引用方式
GB/T 7714
OVTCHINNIKOV, ALEXANDER,BERISHEV, IGOR,KOMISSAROV, ALEXEY,et al. Laser ablation process for manufacturing submounts for laser diodes and laser diode units. US20160352070A1. 2016-12-01.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace