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	Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods
	ODNOBLYUDOV, VLADIMIR; SCHUBERT, MARTIN F.; SCHELLHAMMER, SCOTT D.; FREI, JEREMY S.
	2013-07-11
著作权人	MICRON TECHNOLOGY, INC.
专利号	US20130175560A1
国家	美国
文献子类	发明申请
其他题名	Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods
英文摘要	Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts.
公开日期	2013-07-11
申请日期	2012-01-09
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54296]
专题	半导体激光器专利数据库
作者单位	MICRON TECHNOLOGY, INC.
推荐引用方式 GB/T 7714	ODNOBLYUDOV, VLADIMIR,SCHUBERT, MARTIN F.,SCHELLHAMMER, SCOTT D.,et al. Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods. US20130175560A1. 2013-07-11.

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