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	Vertical Surface Emitting Semiconductor Device
	STRITTMATTER, ANDRE; CHUA, CHRISTOPHER L.; KIESEL, PETER; JOHNSON, NOBLE M.
	2011-11-03
著作权人	PALO ALTO RESEARCH CENTER INCORPORATED
专利号	US20110268143A1
国家	美国
文献子类	发明申请
其他题名	Vertical Surface Emitting Semiconductor Device
英文摘要	A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.
公开日期	2011-11-03
申请日期	2011-07-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/54249]
专题	半导体激光器专利数据库
作者单位	PALO ALTO RESEARCH CENTER INCORPORATED
推荐引用方式 GB/T 7714	STRITTMATTER, ANDRE,CHUA, CHRISTOPHER L.,KIESEL, PETER,et al. Vertical Surface Emitting Semiconductor Device. US20110268143A1. 2011-11-03.

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