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	Electrically pumped semiconductor evanescent laser
	BOWERS, JOHN E.; COHEN, ODED; FANG, ALEXANDER W.; JONES, RICHARD; PANICCIA, MARIO J.; PARK, HYUNDAI
	2008-12-31
著作权人	INTEL CORPORATION
专利号	WO2008097330A3
国家	世界知识产权组织
文献子类	发明申请
其他题名	Electrically pumped semiconductor evanescent laser
英文摘要	An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
公开日期	2008-12-31
申请日期	2007-06-25
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/53941]
专题	半导体激光器专利数据库
作者单位	INTEL CORPORATION
推荐引用方式 GB/T 7714	BOWERS, JOHN E.,COHEN, ODED,FANG, ALEXANDER W.,et al. Electrically pumped semiconductor evanescent laser. WO2008097330A3. 2008-12-31.

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