The improvement of the field emission properties from graphene films: Ti transition layer and annealing process

CORC > 兰州化学物理研究所 > 中国科学院兰州化学物理研究所 > 固体润滑国家重点实验室

	The improvement of the field emission properties from graphene films: Ti transition layer and annealing process
	Li J(李军)1,2; Chen JT(陈江涛)1 ; Luo BM(罗保民)1,2; Yan XB(阎兴斌)1 ; Xue QJ(薛群基)1 ; Yan XB(阎兴斌); Yan XB(阎兴斌); Yan XB(阎兴斌)
刊名	AIP Advances
	2012
卷号	2 期号:2 页码:022101(1-9)
ISSN号	2158-3226
通讯作者	阎兴斌
英文摘要	Chemical-reduced graphene oxide (rGO) ﬁlms were deposited on titanium (Ti)-coated silicon substrates by a simple electrophoretic deposition. The rGO ﬁlms were annealed under argon atmosphere at different temperatures. The morphology and microstructure of the rGO ﬁlms before and after annealing were characterized using scanning electron microscope, X-ray diffraction and Raman spectroscope. The ﬁeld emission behaviors from these rGO ﬁlms were investigated. The results show that, Ti-based transition layer can improve the stability of ﬁeld emission from the rGO ﬁlm, and the annealing at appropriate temperature is in favor of the ﬁeld emission. Particularly, the rGO ﬁlm displays an unexpected vacuum breakdown phenomenon at a relatively high current density. In addition, it is found that the ﬁeld emission property of the rGO ﬁlm is dependent on anode-sample distance and the ﬁlm exhibits lower turn on ﬁeld at larger anode-sample distance.
学科主题	材料科学与物理化学
收录类别	SCI
资助信息	the Natural Science Foundation of China (51002161);the Top Hundred Talents Program of Chinese Academy of Sciences
语种	英语
WOS记录号	WOS:000305831300002
公开日期	2013-07-12
内容类型	期刊论文
源URL	[http://210.77.64.217/handle/362003/3279]
专题	兰州化学物理研究所_固体润滑国家重点实验室
通讯作者	Yan XB(阎兴斌); Yan XB(阎兴斌); Yan XB(阎兴斌)
作者单位	1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Li J,Chen JT,Luo BM,et al. The improvement of the field emission properties from graphene films: Ti transition layer and annealing process[J]. AIP Advances,2012,2(2):022101(1-9).
APA	Li J.,Chen JT.,Luo BM.,Yan XB.,Xue QJ.,...&阎兴斌.(2012).The improvement of the field emission properties from graphene films: Ti transition layer and annealing process.AIP Advances,2(2),022101(1-9).
MLA	Li J,et al."The improvement of the field emission properties from graphene films: Ti transition layer and annealing process".AIP Advances 2.2(2012):022101(1-9).