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	Semicoductor radiating substrate and production method therefor and package
	TAKASHIMA, KOUICHI; YAMAGATA, SHIN-ICHI; ABE, YUGAKU; SASAME, AKIRA
	2004-07-15
著作权人	SUMITOMO ELECTRIC INDUSTRIES, LTD.
专利号	US20040135247A1
国家	美国
文献子类	发明申请
其他题名	Semicoductor radiating substrate and production method therefor and package
英文摘要	In a semiconductor heat-dissipating substrate made of a Cu-W alloy whose pores have been infiltrated with copper, being a porous tungsten body whose pore diameter at a specific cumulative surface area of 95% is 0.3 mum or more, and whose pore diameter at a specific cumulative surface area of 5% is 30 mum or less, thermal conductivity of 210 W/m.K or more is obtained by decreasing the content of iron-family metal to be less than 0.02 weight %. Likewise, changing the amount of infiltrated copper in a molded object by utilizing a multi-shaft press to vary the amount of vesicles in the middle and peripheral portions makes for offering at low cost a semiconductor heat-dissipating substrate that in between middle and peripheral portions made of different materials does not have bonding matter.
公开日期	2004-07-15
申请日期	2002-08-23
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/52824]
专题	半导体激光器专利数据库
作者单位	SUMITOMO ELECTRIC INDUSTRIES, LTD.
推荐引用方式 GB/T 7714	TAKASHIMA, KOUICHI,YAMAGATA, SHIN-ICHI,ABE, YUGAKU,et al. Semicoductor radiating substrate and production method therefor and package. US20040135247A1. 2004-07-15.

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