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	Method of fabricating a monolithic expanded beam mode electroabsorption modulator
	BOND, AARON; JAMBUNATHAN, RAM; CHOI, WON JIN
	2003-07-31
著作权人	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
专利号	US20030142895A1
国家	美国
文献子类	发明申请
其他题名	Method of fabricating a monolithic expanded beam mode electroabsorption modulator
英文摘要	A monolithic single pass expanded beam mode active optical device includes: a substrate; a waveguide layer coupled to the top surface of the substrate; a semiconductor layer coupled to the waveguide layer; first and second electrodes for receiving an electric signal coupled to the substrate and the semiconductor layer, respectively. The waveguide layer includes a plurality of sublayers, forming a quantum well structure, which is responsive to the electric signal. The waveguide layer has three sections, two expansion/contraction sections and an active section, which extends between and adjacent to the two expansion/contraction sections. The thickness of at least one of the plurality of sublayers varies within the expansion/contraction portions of the quantum well structure. Possible interactions of the active region with the light include: absorption in the case of an electro-absorptive modulator and optical gain.
公开日期	2003-07-31
申请日期	2002-01-25
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/52623]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式 GB/T 7714	BOND, AARON,JAMBUNATHAN, RAM,CHOI, WON JIN. Method of fabricating a monolithic expanded beam mode electroabsorption modulator. US20030142895A1. 2003-07-31.

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