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	高電力外部空洞光学的ポンピング半導体レーザー
	カープラーラ、アンドレア; チラ、ジュアン·エル; スピネリー、ルイス·エイ
	2002-11-26
著作权人	コヒーレント·インク
专利号	JP2002540590A
国家	日本
文献子类	发明申请
其他题名	高電力外部空洞光学的ポンピング半導体レーザー
英文摘要	External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multiplayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation. Particular features of the OPS-lasers include a heat sink-assembly for cooling the OPS-structure, a folded resonator concept for providing optimum beam size at optically-nonlinear crystals used for frequency conversion, preferred selection of optically-nonlinear materials for frequency-conversion, and compound resonator designs for amplifying second harmonic-radiation for subsequent conversion to third or fourth harmonic radiation.
公开日期	2002-11-26
申请日期	1999-10-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/51275]
专题	半导体激光器专利数据库
作者单位	コヒーレント·インク
推荐引用方式 GB/T 7714	カープラーラ、アンドレア,チラ、ジュアン·エル,スピネリー、ルイス·エイ. 高電力外部空洞光学的ポンピング半導体レーザー. JP2002540590A. 2002-11-26.

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