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	Bistable semiconductor laser
	UENOHARA HIROYUKI; IWAMURA HIDETOSHI
	1992-08-10
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1992218990A
国家	日本
文献子类	发明申请
其他题名	Bistable semiconductor laser
英文摘要	PURPOSE:To provide a bistable semiconductor laser, which is excellent in the coupling efficiency of a plurality of external input lights and is great in the adaptivity to two-dimension parallel processing. CONSTITUTION:In a bistable semiconductor laser, which has a gain region 5 which generates light and amplifies it and a saturable absorptive region 3 which exists in a resonator and absorbs light and generates bistable operation by the saturation of its own absorption coefficient, the light is emitted (light output 14) in vertical direction to the semiconductor crystal face by forming the gain region 5 and the saturable absorptive region 3 in the direction of growth of the semiconductor crystals, and further 45 deg. mirrors 12 and 13 for coupling the input lights 15 and 16 from outside entered vertically to the crystal substrate with the saturable absorptive region 3 or two-dimension diffraction gratings are provided on both sides of the saturable absorptive region 3.
公开日期	1992-08-10
申请日期	1990-12-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/50666]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	UENOHARA HIROYUKI,IWAMURA HIDETOSHI. Bistable semiconductor laser. JP1992218990A. 1992-08-10.

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