QQ客服 官方微博 反馈留言

	Window structure semiconductor laser and manufacture method
	KOMAZAKI IWAO
	1992-02-27
著作权人	NEC CORP
专利号	JP1992061391A
国家	日本
文献子类	发明申请
其他题名	Window structure semiconductor laser and manufacture method
英文摘要	PURPOSE:To make it possible to couple an active range with a window range smoothly, facilitate an etching process for the formation of the window, and embody a semiconductor laser whose output is large with good yield. CONSTITUTION:The etching depth of a water having a quantum well structure active layer is arranged to be near an active layer. Si ion beam implantation is made into an n type optical guide layer 4 at a shallow depth before regrowth and turns crystal defect on the surface. A layer whose impurity concentration exceeds 2X10cm is installed on the boarder between an active layer and a window layer. The active layer in the remaining window region is placed out of order so that the hysteresis characteristics may be eliminated. At the same time when the active layer does not remain, it is possible to reduce current leakage by way of the interface of regrowth. Both regrowth and annealing can proceed simultaneously wile the loss of the high concentration impurity layer produced by Si ion beam implantation is small, say, about 10cm, which does not increase its threshold to a large extent. Therefore, this construction makes it possible to manufacture a semiconductor laser whose output is large and highly efficient with an excellent coupling efficiency.
公开日期	1992-02-27
申请日期	1990-06-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/50626]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KOMAZAKI IWAO. Window structure semiconductor laser and manufacture method. JP1992061391A. 1992-02-27.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。