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	Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
	SHIEH, CHAN-LONG; TSAO, JEFF
	2004-02-24
著作权人	JDS UNIPHASE CORPORATION
专利号	US6696308
国家	美国
文献子类	授权发明
其他题名	Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
英文摘要	A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser includes epitaxially growing a stack of alternate layers of a first material and a second material on a compatible substrate. A long wave-length active region is epitaxially grown on the stack and a lasing aperture and current confinement volume are defined in the long wave-length active region. A first mirror stack is formed on the long wave-length active region and portions of one of the first material and the second material are removed to form a high reflectivity second mirror stack.
公开日期	2004-02-24
申请日期	2000-10-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/48388]
专题	半导体激光器专利数据库
作者单位	JDS UNIPHASE CORPORATION
推荐引用方式 GB/T 7714	SHIEH, CHAN-LONG,TSAO, JEFF. Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication. US6696308. 2004-02-24.

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