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	Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
	PAOLI, THOMAS L.; EPLER, JOHN E.
	1996-10-08
著作权人	XEROX CORPORATION
专利号	US5563094
国家	美国
文献子类	授权发明
其他题名	Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
英文摘要	In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form reversed bias current confinement structures in semiconductor devices, such as heterostructure lasers and array lasers.
公开日期	1996-10-08
申请日期	1990-09-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47682]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	PAOLI, THOMAS L.,EPLER, JOHN E.. Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same. US5563094. 1996-10-08.

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