| A coherent stimulated emission device | |
| - | |
| 1967-02-08 | |
| 著作权人 | GENERAL ELECTRIC COMPANY |
| 专利号 | GB1057835A |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | A coherent stimulated emission device |
| 英文摘要 | 1,057,835. Lasers; semi-conductor devices. GENERAL ELECTRIC CO. June 8, 1964 [June 10, 1963; Aug. 1963], No. 23674/64. Headings H1C and H1K. A semi-conductor laser device 1 is arranged between a pair of large electrically and thermally conductive discs 5, 7 in intimate electrical, thermal and mechanical contact therewith so that heat developed during operation is rapidly removed, permitting continuous, high-power operation. The laser diode may be of GaAs, InSb, InAs, InP, GaSb or alloys therebetween, or may be an alloy of GaAs and GaP. Other suitable materials are PbS, PbSe and PbTe, doped with indium as donor impurity and with excess anion as the acceptor. In Group III-- Group V compounds S, Se or Te may be used as donors and Cd, Hg, Mn or Zn as acceptors. Tin, germanium or silicon may also be used as dopants, the conductivity type being dependent upon the host material. Discs 5, 7 have a similar coefficient of expansion to the laser diode material, and may be of Cr, BeO, W, Mo, Si, diamond, or GeAs, the choice being determined by the temperature of the heat sink. With a GaAs laser diode, discs 5, 7 may be of tungsten plated with nickel coated with a bonding agent, such as silver or gold, and plated with layer of tin for contact with the N-type portion of the diode, and with a layer of indium adjacent the P-type portion. The P-type portion of the diode is first alloyed to the disc 7, together with a thermally conductive, electrically insulating disc 9, e.g. of gallium arsenide, with a slot to accommodate diode The surfaces of disc 9 and diode I are then ground to establish a common plane and disc 5 is alloyed thereto. Diode 1 is preferably less than 200 microns thick. Opposite surfaces perpendicular to the PN junction are made accurately parallel and polished to support a standing wave. Alternatively two surfaces 30, 31 may be provided accurately perpendicular to each other, and subtending angles of 45 degrees to surface 32, from which the radiation is emitted. The diode may be mounted on a thermal sink, consisting of a copper bar mounted beneath a container filled with liquid nitrogen, air, hydrogen or helium. The assembly is then placed in an evacuated enclosure. |
| 公开日期 | 1967-02-08 |
| 申请日期 | 1964-06-08 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/47486]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GENERAL ELECTRIC COMPANY |
| 推荐引用方式 GB/T 7714 | -. A coherent stimulated emission device. GB1057835A. 1967-02-08. |
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