Type II mid-infrared quantum well laser
CALCOTT, PHILIP DOUGLAS JOHN
2007-10-09
著作权人FLIR SYSTEMS TRADING BELGIUM
专利号US7280576
国家美国
文献子类授权发明
其他题名Type II mid-infrared quantum well laser
英文摘要A mid-infrared emitting indirect bandgap quantum well semiconductor laser with an optical waveguide structure having an active waveguide core. The active waveguide core comprises at least one repetition of a sub-region comprising in the following order a first wide bandgap layer, a first conduction band layer of InAs, a valence band layer of Ga(1-x)InxSb where x≧0.7, preferably of InSB (ie. x=1), having a thickness of less than 15 Angstroms, a second conduction band layer of InAs and a second wide bandgap barrier layer. The barrier layers co-operate to provide electrical confinement for the carriers within the intervening conduction band and valence band layers and optical confinement in the active core region is provided by the optical waveguide structure.
公开日期2007-10-09
申请日期2002-09-10
状态授权
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/47410]  
专题半导体激光器专利数据库
作者单位FLIR SYSTEMS TRADING BELGIUM
推荐引用方式
GB/T 7714
CALCOTT, PHILIP DOUGLAS JOHN. Type II mid-infrared quantum well laser. US7280576. 2007-10-09.
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