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	Article comprising a semiconductor laser with carrier stopper layer
	BELENKY, GREGORY; KZARINOV, RUDOLF F.; KOJIMA, KEISUKE; REYNOLDS, JR., CLAUDE L.
	1996-07-23
著作权人	AT&T IPM CORP.
专利号	US5539762
国家	美国
文献子类	授权发明
其他题名	Article comprising a semiconductor laser with carrier stopper layer
英文摘要	A novel InP-based semiconductor laser comprises an unpatterned active region that is essentially co-extensive with the substrate of the laser, an electron stopper layer, and a separate confinement heterostructure (SCH) layer that has a portion of thickness greater than the thickness of the remainder of the SCH layer. The difference in thickness serves to provide lateral guiding of the laser mode. A patterned current blocking layer is disposed on the SCH layer, with a window in the blocking layer defining the region of increased thickness of the SCH layer. The inventive laser is readily manufacturable and can have improved properties.
公开日期	1996-07-23
申请日期	1995-05-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/47253]
专题	半导体激光器专利数据库
作者单位	AT&T IPM CORP.
推荐引用方式 GB/T 7714	BELENKY, GREGORY,KZARINOV, RUDOLF F.,KOJIMA, KEISUKE,et al. Article comprising a semiconductor laser with carrier stopper layer. US5539762. 1996-07-23.

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