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	Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
	JOHNSON, RALPH H.
	2006-08-22
著作权人	FINISAR CORPORATION
专利号	US7095770
国家	美国
文献子类	授权发明
其他题名	Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
英文摘要	Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well comprised of InGaAsSbN; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Confinement and barrier layers can comprise AlGaAs. Barrier layer, in the alternative, can also comprise GaAsP. Nitrogen can be placed in the quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.
公开日期	2006-08-22
申请日期	2001-12-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46637]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	JOHNSON, RALPH H.. Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region. US7095770. 2006-08-22.

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