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	Material systems for long wavelength lasers grown on GaSb or InAs substrates
	BURAK, DARIUSZ
	2004-11-02
著作权人	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
专利号	US6813297
国家	美国
文献子类	授权发明
其他题名	Material systems for long wavelength lasers grown on GaSb or InAs substrates
英文摘要	A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of GaSb or InAs, and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 2-4 um. The quantum well is made of GaInSbP, GaInSbAs, AlInSbAs, or AlInSbP, and the barrier layers are made of AlInSbP, AlGaSbP, AlInSbAs, AlGaSbAs, or AlSbPAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (DeltaEc and DeltaEv) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the substrate.
公开日期	2004-11-02
申请日期	2002-07-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46625]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
推荐引用方式 GB/T 7714	BURAK, DARIUSZ. Material systems for long wavelength lasers grown on GaSb or InAs substrates. US6813297. 2004-11-02.

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