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	Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
	BOTEZ, DAN; SHIN, JAE CHEOL
	2014-09-30
著作权人	WISCONSIN ALUMNI RESEARCH FOUNDATION
专利号	US8848754
国家	美国
文献子类	授权发明
其他题名	Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers
英文摘要	Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 26.
公开日期	2014-09-30
申请日期	2012-08-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46323]
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMNI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	BOTEZ, DAN,SHIN, JAE CHEOL. Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers. US8848754. 2014-09-30.

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