QQ客服 官方微博 反馈留言

	Multi-quantum barrier laser
	CHEN, YING C.; SERREZE, HARVEY B.
	1994-06-07
著作权人	CURATORS OF THE UNIVERSITY OF MISSOURI, THE
专利号	US5319660
国家	美国
文献子类	授权发明
其他题名	Multi-quantum barrier laser
英文摘要	A semiconductor laser device which provides enhanced carrier confinement. This device utilizes a single or multi-quantum well structure located between graded index confinement layers which are in turn between a pair of cladding layers. Semiconductor layers are selected such that the quantum well active region and confinement layers form a PN junction by being located between layers having N-type dopants on one side and P-type dopants on the second side for proper diode response. Within each confinement layer there is formed a plurality of multi-quantum barrier layers which serve to further increase the carrier confinement within the quantum well region by increasing the effective potential barrier within the graded index confinement region. The multi-quantum barrier layers are comprised of layers of the material forming the graded index confinement layers having alternating large and small concentrations of the material whose percentage is being varied in the graded index confinement layers.
公开日期	1994-06-07
申请日期	1992-05-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46297]
专题	半导体激光器专利数据库
作者单位	CURATORS OF THE UNIVERSITY OF MISSOURI, THE
推荐引用方式 GB/T 7714	CHEN, YING C.,SERREZE, HARVEY B.. Multi-quantum barrier laser. US5319660. 1994-06-07.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。