| Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device | |
| KOIKE, MASAYOSHI; YAMASAKI, SHIRO | |
| 2003-09-09 | |
| 著作权人 | TOYODA GOSEI CO., LTD. |
| 专利号 | US6617061 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device |
| 英文摘要 | A clad layer is provided as a multilayer structure made of an alternate laminate of 20 layers of Al0.2Ga0.8N 50 nm thick and 20 layers of Ga0.99In0.01N 20 nm thick. The clad layer about 4 mum thick has a low elastic constant because the clad layer is provided as a multilayer structure. In a laser diode, it is useful that another layer such as a guide layer requiring a band gap of aluminum gallium nitride (AlxGa1-xN 0 |
| 公开日期 | 2003-09-09 |
| 申请日期 | 2002-09-24 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/46219]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYODA GOSEI CO., LTD. |
| 推荐引用方式 GB/T 7714 | KOIKE, MASAYOSHI,YAMASAKI, SHIRO. Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device. US6617061. 2003-09-09. |
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