QQ客服 官方微博 反馈留言

	Method of fabricating a semiconductor optical device
	HIRATA, TAKAAKI
	1992-09-08
著作权人	OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO., LTD.
专利号	US5145792
国家	美国
文献子类	授权发明
其他题名	Method of fabricating a semiconductor optical device
英文摘要	A semiconductor optical device having a quantum well structure which can easily integrate plural optical devices of band gaps which are different from each other, and yet can achieve a high coupling coefficient by means of disordering the quantum well structure to form a waveguide region except for the portion which is used as an active region. Non-absorbing edges can be formed on the semiconductor laser on the optically integrated circuits by disordering the facets of the quantum well structure with ion implantation and thermal processing.
公开日期	1992-09-08
申请日期	1991-11-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46216]
专题	半导体激光器专利数据库
作者单位	OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO., LTD.
推荐引用方式 GB/T 7714	HIRATA, TAKAAKI. Method of fabricating a semiconductor optical device. US5145792. 1992-09-08.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。