Periodic monolayer semiconductor structures grown by molecular beam epitaxy | |
DINGLE, RAYMOND; GOSSARD, ARTHUR C.; PETROFF, PIERRE M.; WIEGMANN, WILLIAM | |
1980-05-27 | |
著作权人 | BELL TELEPHONE LABORATORIES, INCORPORATED |
专利号 | US4205329 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Periodic monolayer semiconductor structures grown by molecular beam epitaxy |
英文摘要 | Suitably modified molecular beam epitaxy (MBE) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs)n(AlAs)m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (AlxGa1-xAs)n(Ge2)m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described. |
公开日期 | 1980-05-27 |
申请日期 | 1977-11-18 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/46180] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | BELL TELEPHONE LABORATORIES, INCORPORATED |
推荐引用方式 GB/T 7714 | DINGLE, RAYMOND,GOSSARD, ARTHUR C.,PETROFF, PIERRE M.,et al. Periodic monolayer semiconductor structures grown by molecular beam epitaxy. US4205329. 1980-05-27. |
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