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	Semiconductor device and method for producing the same
	ONISHI, TOSHIKAZU; ADACHI, HIDETO; MANNOU, MASAYA; TAKAMORI, AKIRA
	2003-12-30
著作权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
专利号	US6671301
国家	美国
文献子类	授权发明
其他题名	Semiconductor device and method for producing the same
英文摘要	A semiconductor laser device including: a semiconductor substrate of a first conductivity type; a cladding layer of the first conductivity type provided on the semiconductor substrate; an active layer provided on the cladding layer of the first conductivity type, the active layer having a super-lattice structure including a disordered region in a vicinity of at least one cavity end face; a first cladding layer of a second conductivity type provided on the active layer; an etching stop layer of the second conductivity type provided on the first cladding layer; and a second cladding layer of the second conductivity type provided on the etching stop layer, the second cladding layer forming a ridge structure, the ridge structure extending along a cavity length direction and having a predetermined width. A concentration of an impurity in the etching stop layer in the vicinity of the at least one cavity end face is greater than a concentration of the impurity in the interior of a cavity and equal to or smaller than about 2x10cm.
公开日期	2003-12-30
申请日期	2000-05-05
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/46023]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	ONISHI, TOSHIKAZU,ADACHI, HIDETO,MANNOU, MASAYA,et al. Semiconductor device and method for producing the same. US6671301. 2003-12-30.

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