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	GaAs/AlGaAs heterostructure laser containing indium
	SCIFRES, DONALD R.; WELCH, DAVID F.; ENDRIZ, JOHN; STREIFER, WILLIAM
	1991-01-08
著作权人	JDS UNIPHASE CORPORATION
专利号	US4984242
国家	美国
文献子类	授权发明
其他题名	GaAs/AlGaAs heterostructure laser containing indium
英文摘要	GaAs/AlGaAs heterostructure lasers containing indium in at least one layer other than or in addition to the active region. Embodiments are described in which indium added in low concentration to the cladding functions to match the lattice constants between the cladding and active layers, in which indium is added in high concentration to form strain layers that prevent defect migration therethrough and if proximate to the active region decrease transparency current and increase differential gain, in which indium is added uniformly to all layers to suppress defect formation, and in which indium is added to a cap layer to reduce metallization contact resistance.
公开日期	1991-01-08
申请日期	1989-09-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45948]
专题	半导体激光器专利数据库
作者单位	JDS UNIPHASE CORPORATION
推荐引用方式 GB/T 7714	SCIFRES, DONALD R.,WELCH, DAVID F.,ENDRIZ, JOHN,et al. GaAs/AlGaAs heterostructure laser containing indium. US4984242. 1991-01-08.

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