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	Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
	EMRICK, RUDY M.; BOSCO, BRUCE ALLEN; HOLMES, JOHN E.; FRANSON, STEVEN JAMES; ROCKWELL, STEPHEN KENT
	2005-02-15
著作权人	NXP USA, INC.
专利号	US6855992
国家	美国
文献子类	授权发明
其他题名	Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
英文摘要	A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.
公开日期	2005-02-15
申请日期	2001-07-24
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45768]
专题	半导体激光器专利数据库
作者单位	NXP USA, INC.
推荐引用方式 GB/T 7714	EMRICK, RUDY M.,BOSCO, BRUCE ALLEN,HOLMES, JOHN E.,et al. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same. US6855992. 2005-02-15.

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