QQ客服 官方微博 反馈留言

	Long-wavelength photonic device with GaAsSb quantum-well layer
	CHANG, YING-LAN; CORZINE, SCOTT W.; DUPUIS, RUSSELL D.; NOH, MIN SOO; RYOU, JAE HYUN; TAN, MICHAEL R. T.; TANDON, ASHISH
	2004-03-23
著作权人	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
专利号	US6711195
国家	美国
文献子类	授权发明
其他题名	Long-wavelength photonic device with GaAsSb quantum-well layer
英文摘要	The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y>=0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.
公开日期	2004-03-23
申请日期	2002-02-28
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45707]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式 GB/T 7714	CHANG, YING-LAN,CORZINE, SCOTT W.,DUPUIS, RUSSELL D.,et al. Long-wavelength photonic device with GaAsSb quantum-well layer. US6711195. 2004-03-23.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。