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	Semiconductor laser structure with an increased catastrophic optical damage level
	YU, YUAN-CHEN; CHIU, CHIEN-CHIA; HO, JIN-KUO
	2002-04-16
著作权人	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
专利号	US6373875
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser structure with an increased catastrophic optical damage level
英文摘要	A semiconductor laser structure is provided, which has an increased catastrophic optical damage (COD) level that allows the laser diode to have an increased life time of use. This semiconductor laser structure is characterized in the forming of a current-blocking structure proximate to the facets of the laser diode, which can help reduce the injected current into the facets, thereby increasing the COD level of the resulted laser diode. As a result, the resulted laser diode can operate at a high output power and nonetheless have an increased life time of use. Moreover, the forming of the current-blocking layers proximate to the facets can be performed simply by incorporating an additional photomask step in the fabrication without having equipment such as epitaxial equipment or vacuum equipment in the case of the prior art.
公开日期	2002-04-16
申请日期	1999-08-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45681]
专题	半导体激光器专利数据库
作者单位	INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	YU, YUAN-CHEN,CHIU, CHIEN-CHIA,HO, JIN-KUO. Semiconductor laser structure with an increased catastrophic optical damage level. US6373875. 2002-04-16.

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