Native green laser semiconductor devices
BHAT, RAJARAM; GALLINAT, CHAD STEPHEN; NAPIERALA, JEROME; SIZOV, DMITRY; ZAH, CHUNG-EN
2011-06-21
著作权人THORLABS QUANTUM ELECTRONICS, INC.
专利号US7965752
国家美国
文献子类授权发明
其他题名Native green laser semiconductor devices
英文摘要A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.
公开日期2011-06-21
申请日期2009-11-30
状态授权
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/45622]  
专题半导体激光器专利数据库
作者单位THORLABS QUANTUM ELECTRONICS, INC.
推荐引用方式
GB/T 7714
BHAT, RAJARAM,GALLINAT, CHAD STEPHEN,NAPIERALA, JEROME,et al. Native green laser semiconductor devices. US7965752. 2011-06-21.
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