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	Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device
	KANO, TAKASHI; OHBO, HIROKI; HAYASHI, NOBUHIKO
	2004-11-23
著作权人	EPISTAR CORPORATION
专利号	US6821807
国家	美国
文献子类	授权发明
其他题名	Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device
英文摘要	In the manufacture of a semiconductor laser device, a low temperature buffer layer is grown on a sapphire substrate at a growth rate of 25 to 30 Å/sec. On the low temperature buffer layer, an n-GaN layer, a anti-crack layer, an n-cladding layer, an n-guide layer, an MQW active layer, a p-carrier blocking layer, a p-guide layer, a p-cladding layer and a p-contact layer are grown in this order. The growth of the low temperature buffer layer at the high growth rate allows a good low temperature buffer layer to be stably provided with good reproducibility. Thus, good crystallinity and electrical characteristics can stably be provided in the above layers.
公开日期	2004-11-23
申请日期	2001-08-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44676]
专题	半导体激光器专利数据库
作者单位	EPISTAR CORPORATION
推荐引用方式 GB/T 7714	KANO, TAKASHI,OHBO, HIROKI,HAYASHI, NOBUHIKO. Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device. US6821807. 2004-11-23.

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