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	Nitride-based laser diode with GaN waveguide/cladding layer
	KNEISSL, MICHAEL A.; BOUR, DAVID P.; ROMANO, LINDA T.; VAN DE WALLE, CHRISTIAN G.
	2006-10-17
著作权人	XEROX CORPORATION
专利号	US7123637
国家	美国
文献子类	授权发明
其他题名	Nitride-based laser diode with GaN waveguide/cladding layer
英文摘要	A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.
公开日期	2006-10-17
申请日期	2003-03-20
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44633]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	KNEISSL, MICHAEL A.,BOUR, DAVID P.,ROMANO, LINDA T.,et al. Nitride-based laser diode with GaN waveguide/cladding layer. US7123637. 2006-10-17.

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