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	Method for implantation of high dopant concentrations in wide band gap materials
	USOV, IGOR; ARENDT, PAUL N.
著作权人	LOS ALAMOS NATIONAL SECURITY, LLC
专利号	US20060286784A1
国家	美国
文献子类	发明申请
其他题名	Method for implantation of high dopant concentrations in wide band gap materials
英文摘要	A method that combines alternate low/medium ion dose implantation with rapid thermal annealing at relatively low temperatures. At least one dopant is implanted in one of a single crystal and an epitaxial film of the wide band gap compound by a plurality of implantation cycles. The number of implantation cycles is sufficient to implant a predetermined concentration of the dopant in one of the single crystal and the epitaxial film. Each of the implantation cycles includes the steps of: implanting a portion of the predetermined concentration of the one dopant in one of the single crystal and the epitaxial film; annealing one of the single crystal and the epitaxial film and implanted portion at a predetermined temperature for a predetermined time to repair damage to one of the single crystal and the epitaxial film caused by implantation and activates the implanted dopant; and cooling the annealed single crystal and implanted portion to a temperature of less than about 100° C. This combination produces high concentrations of dopants, while minimizing the defect concentration.
公开日期	2006-12-21
申请日期	2006-05-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43529]
专题	半导体激光器专利数据库
作者单位	LOS ALAMOS NATIONAL SECURITY, LLC
推荐引用方式 GB/T 7714	USOV, IGOR,ARENDT, PAUL N.. Method for implantation of high dopant concentrations in wide band gap materials. US20060286784A1.

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